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SemiWell Semiconductor Bi-Directional Triode Thyristor
Symbol
STM1A60
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 1 A ) High Commutation dv/dt Sensitive Gate Triggering 4 Mode Surface Mount Package

2.T2

3.Gate
1.T1
General Description
This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay also designed for use in MPU interface, TTLlogic.
SOT-223
2
3 2 1
Absolute Maximum Ratings
Symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM TJ TSTG Parameter
( TJ = 25C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz, Gate open TC = 90 C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp=10mS TC = 90 C, Pulse width 1.0us TC = 90 C, t=8.3ms tp = 20us, TJ=125C tp = 20us, TJ=125C Ratings 600 1.0 9.1/10 0.41 1.0 0.1 0.5 6.0 - 40 ~ 125 - 40 ~ 150 Units V A A A2s W W A V C C
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t Value for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature
Feb, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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STM1A60
Electrical Characteristics
Symbol Items Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 1.5 A, Inst. Measurement Ratings Min. Typ. Max. Unit
IDRM VTM I+GT1 I -GT1 I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) Notes :
Repetitive Peak Off-State Current Peak On-State Voltage I II Gate Trigger Current III IV I II Gate Trigger Voltage III IV Non-Trigger Gate Voltage Critical Rate of Rise OffState Voltage at Commutation Holding Current Thermal Resistance Thermal Resistance
-
-
0.5
mA
-
7 -
1.6 5 5
V
VD = 6 V, RL=10 VD = 6 V, RL=10 TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM 0.2 1.8 2.0 5 12 1.8 1.8
mA
V
V
2.0
-
-
V/ mA C/W C/W
Junction to case Junction to Ambient -
4.0 -
25 60
1. Pulse Width 300us , Duty cycle 2%
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STM1A60
Fig 1. Gate Characteristics
10
1
Fig 2. On-State Voltage
10
1
VGM (6V)
25
10
0
PG(AV) (0.1W) IGM (0.5A)
25 I I I
+ GT1 _ GT1 _ GT3
I
+ GT3
On-State Current [A]
Gate Voltage [V]
PGM (1W)
TJ = 125 C
10
0
o
TJ = 25 C
o
VGD(0.2V)
10
-1
10
0
10
1
10
2
10
3
10
-1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
= 180o = 150 o = 120 o = 90 = 60 = 30
0.6
o o o
Fig 4. On State Current vs. Allowable Case Temperature
Allowable Case Temperature [ oC]
130
1.5
Power Dissipation [W]
1.2

360
2
120
0.9
110
: Conduction Angle
100

2
0.3
90
360
: Conduction Angle
80 0.0

= 30 o = 60 o = 90 o = 120 o = 150 o = 180
o
0.0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.2
0.4
0.6
0.8
1.0
1.2
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
12
10
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
Surge On-State Current [A]
V
+ GT1 _ GT1 + GT3 _ GT3
8
60Hz
VGT (25 C) VGT (t C)
o o
V V
1
V
6
4
50Hz
2
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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STM1A60
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
2
Fig 8. Transient Thermal Impedance
Transient Thermal Impedance [ C/W]
R (J-A)
I
IGT (25 C)
IGT (t oC)
I
1
I
+ GT1 _ GT1 _ GT3
o
o
10
1
R (J-C)
I
+ GT3
0.1 -50
10
0
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
10
3
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
10

6V

A 6V

A 6V
A

RG
6V
A
V
RG
V
RG
V
V
RG
Test Procedure
Test Procedure
Test Procedure
Test Procedure
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STM1A60
SOT-223 Package Dimension
Dim. A A1 B B1 C D e e1 E H V
mm Min. 0.02 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.3 4.6 3.30 6.70 3.50 7.00 3.70 7.30 0.130 0.264 Typ. Max. 1.80 0.1 0.85 3.15 0.35 6.70 0.0008 0.024 0.114 0.009 0.248 Min.
Inch Typ. Max. 0.071 0.004 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 0.034 0.124 0.014 0.264
10 Max
1. T1 2. T2 3. Gate 4. T2
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